Unified model for p-n junction current-voltage characteristics
نویسندگان
چکیده
منابع مشابه
Current-voltage characteristics of organic materials similar to inorganic p-n homo-junction
We have evaluated the electric characteristics of an organic surfactant material, n-Cethyl-trimethyl-ammonium Bromide (C16TAB) to fabricate the p-n homo-junction. This C16TAB was dissolved in the pure water, where the potassium iodide (KI) was added. The impurities adaptation has been processed in this mixed solution with the application of voltage. The KI is ionized in the water and the potass...
متن کاملCurrent-voltage characteristics of a tunnel junction with resonant centers.
We calculate the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy Ec between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T ≪ Ec the I-V characteristic is linear in V both for V...
متن کاملCurrent-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces
We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H...
متن کاملP-n Junction Diode
Chemist, led the research for the molecular diode (In the semiconductor industry, called p-n junctions)
متن کاملComparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor
The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Open Engineering
سال: 2011
ISSN: 2391-5439
DOI: 10.2478/s13531-011-0006-9